| 摘要 |
PURPOSE:To obtain an element having small irregularities and difference in steps, by providing an insulating film, in which transfer electrodes also serving as gates are embedded, on a semiconductor substrate, wherein a storing diode and a vertical transfer CCD element are formed in the surface layer part; burying the recess parts, which are formed in the surface when the insulating film is provided, with a heat resisting organic insulating layer; and forming specified electrodes and a light conducting layer on the surface. CONSTITUTION:On the surface layer part of a P-type Si substrate 1, N<+> type storing diodes 4 and N<+> type vertical transfer CCD elements 5 are alternately diffused and formed in a plurality of numbers. Scanning parts comprising first and second transfer electrodes 2 and 3, which also serve as gates, are embedded in an SiO2 film 12. The film 12 is formed on the diode 4 and the element 5. Then, a window is provided in the film 12. A first electrode 16, which is connected to the diode 4, is provided. A second electrode 28, which is a picture element electrode, is deposited on the film 12. A third electrode 1' on the surface is deposited on the film 12. A third electrode 1' on the surface is deposited through a light conducting layer 10. Large irregularities are yielded on the surface under this state. Therefore, the recess parts present in the film 12 are buried with heat-resisting organic insulating layers 18 and 19 in the intermediate processes so that especially the layer 10 is flattened as much as possible. |
