| 摘要 |
PURPOSE:To bury even in a deep and wide trench easily and to plane the surface, by burying a dielectric film in the trench for separating elements after forming the element regions. CONSTITUTION:On a P-type substrate 1, an N<+> buried layer and P<+> channel stopper are formed selectively, and base, emitter and collector layers are formed in an N epitaxial layer 4. After an oxide film 9 on the layer 4 is opened and an electrode is formed, a trench 5 is formed and a planed organic film 12 is formed. Thereafter, openings are formed over the respective elements and connecting wiring 11 is formed to finish the device. |
