| 摘要 |
PROBLEM TO BE SOLVED: To obtain a high-resistance polysilicon load resistance type SRAM cell with a desired resistance length by providing a side wall for preventing the diffusion of an impurity between a pad polysilicon layer and a resistance polysilicon layer on an interlayer insulation film. SOLUTION: In an SRAM cell, a sidewall 111 as a resistance length guarantee side wall is included between a low-resistance pad polysilicon layer 110 and a high-resistance polysilicon layer 112 on an interlayer insulation film 108, thus suppressing the diffusion of an impurity from the sidewall of the pad polysilicon layer 110 into the resistance polysilicon layer 112, and hence resulting in only the diffusion from the upper surface of the pad polysilicon layer 110. As a result, the diffusion of the impurity in a crosswise direction for the resistance polysilicon layer 112 from the sidewall of the pad polysilicon layer 110 is suppressed, thus obtaining a desired resistance length L1 and hence stabilizing SRAM characteristics.
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