METHOD OF FABRICATING VARIABLE-RESISTANCE OXIDE FILM FOR RESISTIVE MEMORY DEVICE

摘要

A method for manufacturing a variable resistance oxide layer for a resistance variable memory device is provided to embody mass-production at low costs by using an anodizing process capable of using a binary oxide as a variable resistance oxide layer. A lower electrode(21) is formed on a substrate. A metal(22) is formed on the lower electrode. A variable resistance oxide layer is formed on the resultant structure by oxidizing the metal. An upper electrode(24,25) is formed on the variable resistance oxide layer. The metal is made of one selected from a group consisting of Al, Ta, Nb, Ti, Zr and Hf. The thickness of the variable resistance oxide layer is in a range of 200 to 400 nm.