| 摘要 |
PURPOSE:To shorten the distance between picture element columns and reduce memory capacitance of picture information temporary strong memory without lowering resolution by adjacently arranging three picture element columns in parallel and transferring charges in the perpendicular direction of these picture element columns. CONSTITUTION:Three picture element columns A-C are adjacently arranged in parallel, a charge transfer means b1 is arranged between the picture element columns A, B, a charge transfer means b2 between the picture element columns B, C, the charge transfer means a1, a2 are arranged at the side opposed to the charge transfer means b1 of the picture element column A and the charge transfer means c1, c2 are arranged at the side opposed to the charge transfer means b2 of the picture element column C. The transfer gates T7-T12 are provided between respective structural elements and these are driven by the signals S1-S3. These transfer gates transfer the charges in the perpendicular direction of the figure. As explained above, since only transfer gate and one charge transfer means are provided between respective picture element columns, distance between picture element columns can be shortened considerably and memory capacity M can be reduced remarkably. |
