| 摘要 |
PROBLEM TO BE SOLVED: To provide an amorphous carbon production apparatus and an amorphous carbon production method by which a desired bandgap energy can be easily obtained. SOLUTION: A base material B for growing amorphous carbon C is accommodated in a chamber 11, then a raw material gas G is supplied into the chamber 11, a plasma P of the supplied raw material gas G is formed, and the amorphous carbon C is produced while controlling the speed of the formed plasma P being allowed to reach the base material B. Thereby, it is possible to cause crystallization of carbon and selective etching effect according to the reaching speed. Consequently, it is possible to adjust the sp2/sp3 bonding ratio of carbon, and the amorphous carbon C having a desired bandgap can be easily produced. COPYRIGHT: (C)2009,JPO&INPIT
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