| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technique for improving reverse recovery characteristics of a diode. <P>SOLUTION: A monolithic integrated circuit 100 includes a semiconductor layer 6, an insulation separation part 4, and a diode 6. The insulation separation part 4 insulates an island region 8 as a part of the semiconductor layer 6 from a periphery when viewed in plan view. The diode 16 is formed in the island region 8. The diode 16 has a center region 14 of a first conductivity type and an annular region 10 of a second conductivity type. The center region 14 and the annular region 10 are formed in a surface layer of the semiconductor layer 6. The annular region 10 makes one round around the center region 14 when viewed in plan view. A through part 18 penetrating the semiconductor layer 6 is formed in the island region 8. The through part 18 is surrounded with the center region 14. The monolithic integrated circuit 100 has a trench defining the insulation separation part 4, and a trench defining the through part 18, formed in the same manufacturing process. <P>COPYRIGHT: (C)2013,JPO&INPIT |
