| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon substrate processing method capable of achieving high depth accuracy of a first recess regarding a structure where the first recess is processed from the surface side of a silicon substrate, and then a second recess is processed from the rear side of the substrate to be communicated with the first recess.SOLUTION: A first recess 111 is processed on the first surface of a silicon substrate 101, and a side wall protection film 112S is formed in the side wall of the first recess 111. Then, after etching of the bottom part of the first recess 111, a cavity 113 larger than the first recess 111 regarding a sectional area in a direction parallel to a substrate surface is formed, and an etching stop film 114 is formed in the inner wall of the cavity 113. Then, a second recess 117 is formed from the second surface of the silicon substrate 101 to expose at least a part of the etching stop film 114. Lastly, the etching stop film 114 is removed to communicate the first recess 111 and the second recess 117 with each other, thereby forming a through-hole.SELECTED DRAWING: Figure 4 |
