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发明名称
Insulating gate thin film transistor having a thin insulating layer overlapping a thick insulating layer
摘要
申请公布号
US3320499(A)
申请公布日期
1967.05.16
申请号
US19650468461
申请日期
1965.06.30
申请人
BURROUGHS CORPORATION
发明人
FRANK ROBERT I.;SIMMONS JOHN G.
分类号
H01L29/00
主分类号
H01L29/00
代理机构
代理人
主权项
地址
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