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发明名称
Verfahren zum Herstellen eines Planartransistors fuer Hoechstfrequenzanwendungen
摘要
申请公布号
DE1564732(A1)
申请公布日期
1970.01.02
申请号
DE19661564732
申请日期
1966.10.04
申请人
SIEMENS AG
发明人
WOLFGANG HENNING,DIPL.-PHYS.DR.;HOERSCHELMANN,DIPL.-PHYS,KONSTANTIN VON;PETER ALBUS,DIPL.-ING.
分类号
H01L21/00;H01L21/22;H01L29/00
主分类号
H01L21/00
代理机构
代理人
主权项
地址
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