| 摘要 |
PURPOSE:To prevent generation of a crack, and to improve the mechanical and electrical characteristic of a semiconductor device by a method wherein Zn-Al solder is used for connection of a semiconductor pellet and a substrate. CONSTITUTION:An Al film 7 of 1mum thickness is formed on the back of a pellet 2 consisting of Si, an Al film 8 of about 10mum thickness is formed on the surface of a substrate 1, and Zn foil 9 of 10mum thickness is prepared. The members thereof are heated at 430 deg.C in an N2 atmosphere, and bonding of the pellet is performed scrubbing the pellet 2 against the substrate 1. Because the eutectic temperature of Zn and Al is 382 deg.C, by making Zn and Al to come in contact mutually to be heated at 430 deg.C or more, and moreover scrubbing mutually, oxide films on the surfaces of Al and Zn are broken to be joined meltingly. The N2 atmosphere is for attainment of a junction having little defect peventing oxidation of Zn and Al. |
