GALLIUM NITRIDE COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT AND ITS MANUFACTURE

摘要

PURPOSE:To provide a light emitting diode of a GaN compound semiconductor with high luminance and high reliability and a manufacturing method thereof. CONSTITUTION:An i-layer on an n-layer has a double layer structure wherein a low impurity concentration iL-layer 5 and a high impurity concentration iH- layer 6 are formed. Pit (hole) parts 6a of various sizes are generated in a crystal surface of the high impurity concentration iH-layer 6. An insulation film 9 is formed in the pit part 6a by anode oxidation. Therefore, a current made to flow from an electrode 7 does not concentrate in the pit part 6a and luminance deterioration in a light emitting diode 10 based on local breakdown of the i-layer can be prevented. A light emitting diode having high luminance and high reliability can be acquired in this way.