| 摘要 |
A method of manufacturing a semiconductor device prevents a pattern bridge phenomenon generated by a proximity effect between patterns and a thickness lowering phenomenon of the pattern. As a result, a length of the major axis required in characteristics of the device is secured to improve an electric characteristic and an overlapping margin. A photoresist pattern is formed to have a line/space type, thereby securing a DOF margin in comparison with a photoresist pattern of an island type.
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