APPARATUS FOR PRODUCING SILICON SINGLE CRYSTAL

摘要

PURPOSE:To increase the pull-up speed of a crystal by using a quartz crucible and a partition member having respective specific diameters, making a line connecting the upper end to the lower end of a protection cover to have a specific angle from vertical direction and separating the lower end from the molten Si level by a specific distance. CONSTITUTION:An Si raw material is continuously supplied from a raw material feeding apparatus 14 to a quartz crucible 1 of 18-24 inch in diameter placed in a graphite crucible 2 supported by a rotating pedestal 4. A partition member 8 made of quartz and having a diameter corresponding to 75-84% of the diameter of the quartz crucible is concentrically placed in the quartz crucible 1 and Si melted in a raw material melting part 11 is introduced into a single crystal growing part 12 through a small hole 10 opened at the lower part of the partition member. The diameter of the lower end 17 of the cylindrical side wall of a metallic heat-insulation cover 15 having a 50-1,000cm<2> notch 22 is made to be larger than the diameter of the Si single crystal 5 by 30-50mm and the line connecting the upper end 18 to the lower end 17 of the side wall is inclined from vertical line by 15-25 deg.. An Si single crystal 5 having large diameter can be pulled up at a high speed by the use of the above apparatus.