MANUFACTURE OF MESA TYPE SEMICONDUCTOR DEVICE

摘要

PURPOSE:To provide a method of manufacturing the mesa type semiconductor device in which the insulation film formed at the shoulder of it is farmed so that it is not lower than the surface of a semiconductor substrate and sufficient voltage-resistance is obtained. CONSTITUTION:When a recessed section is formed on a semiconductor wafer for forming a shoulder part of mesa type, a spacer film 4 consisting of a resist film, etc., is coated on the surface of a semiconductor wafer 3 in advance, and then a recessed section 6 is formed by etching the semiconductor wafer together with the spacer film, and further, a glass slurry liquid 7 is poured into the recessed section for baking. By this, the spacer film is burned out, so that the insulation film (glass part 7a) higher than the surface of the semiconductor substrate is formed.