发明名称 ON-SITE GENERATION OF ULTRA-HIGH-PURITY BUFFERED HF FOR SEMICONDUCTOR PROCESSING
摘要 <p>The present application describes systems and methods for preparing ultra-high-purity hydrogen peroxide on-site at an integrated circuit fabrication front-end facility. The starting point is high-purity aqueous H2O2 (e.g. 30 % H2O2). The incoming aqueous H2O2 is further purified in on-site purification units before it is made available for combination with other reagents.</p>
申请公布号 WO1996039237(A1) 申请公布日期 1996.12.12
申请号 US1996009556 申请日期 1996.06.05
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