| 发明名称 |
Flash memory with improved erasability and its circuitry |
| 摘要 |
The present invention relates to improvements in erasing a flash memory. An object of the present invention is to shorten the erasing time. During pre-erase writing, at least either word lines or bit lines are selected in units of multiple lines at a time, and data are written in multiple selective transistors simultaneously. |
| 申请公布号 |
US5608670(A) |
申请公布日期 |
1997.03.04 |
| 申请号 |
US19950436721 |
申请日期 |
1995.05.08 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
AKAOGI, TAKAO;KAWASHIMA, HIROMI;TAKEGUCHI, TETSUJI;HAGIWARA, RYOJI;KASA, YASUSHI;ITANO, KIYOSHI;OGAWA, YASUSHIGE;KAWAMURA, SHOUICHI |
| 分类号 |
G05F3/20;G11C5/14;G11C16/04;G11C16/06;G11C16/08;G11C16/16;G11C16/30;G11C29/00;H03K3/356;H03K19/0185;H03K19/21;(IPC1-7):G11C16/04 |
主分类号 |
G05F3/20 |
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| 主权项 |
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