发明名称 MANUFACTURE OF FIELD EMISSION TYPE COLD CATHODE
摘要 <p>PROBLEM TO BE SOLVED: To manufacture many large area field emission type cold cathodes with high field emission efficiency and high uniformity at low cost. SOLUTION: In a manufacturing method for a field emission type cold cathode, a thermal oxide film 202 is formed on the surface of an Si substrate 201 having a recess whose bottom is sharpened, an emitter material layer 203 is formed on the substrate 201 containing the recess, and a supporting substrate 205 is stuck to the emitter material layer 203. The supporting substrate 205 having the emitter material layer 203 is used as an original substrate, and a resin substrate 207 having a recess whose bottom is sharpened by resin molding is formed, and an emitter material layer 213 is formed so as to bury the inside of the recess of the resin substrate 207 to form an emitter of a field emission type cold cathode. A structure substrate 215 for supporting the emitter material layer 213 is formed on the layer 213, and the resin substrate 207 is removed so as to expose the emitter material layer 213 integrated with the structure substrate 215.</p>
申请公布号 JPH1092300(A) 申请公布日期 1998.04.10
申请号 JP19960246714 申请日期 1996.09.18
申请人 TOSHIBA CORP 发明人 NAKAMOTO MASAYUKI;ONO TOMIO;SAKAI TADASHI;SAKUMA HISASHI;SUZUKI TAKETOSHI
分类号 H01J9/02;(IPC1-7):H01J9/02 主分类号 H01J9/02
代理机构 代理人
主权项
地址