发明名称 SEMICONDUCTOR WAFER HEAT TREATING APPARATUS
摘要 <p>PROBLEM TO BE SOLVED: To efficiently heat-treat a monitor wafer by arranging a heating chamber, waiting chamber and cassette stage on a table top, moving a wafer from a cassette to a boat and reciprocally moving it from the waiting chamber to the heating chamber. SOLUTION: A wafer treated in batch type unit steps is heat-treated before measuring the resistance. In such apparatus 20, a heating chamber 22, waiting chamber 23 and cassette stage 24 are arranged on a table 21 top. The wafer to be heat-treated is mounted on a boat 24, the boat 24 is reciprocally moved by a boat transfer part 40 from the waiting chamber 23 to the heating chamber 22. The wafer on the cassette 26 is transferred to the boat 25 by the wafer transfer part 30. The wafer on the boat 25 is transferred to the cassette 26 by a wafer transport part 50.</p>
申请公布号 JPH1092906(A) 申请公布日期 1998.04.10
申请号 JP19970086690 申请日期 1997.04.04
申请人 SAMSUNG ELECTRON CO LTD 发明人 NAN KIKIN;RI HEIKAN;KIN TOKO;AN YUKAN
分类号 H01L21/66;H01L21/02;H01L21/22;H01L21/324;H01L21/677;(IPC1-7):H01L21/68 主分类号 H01L21/66
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