METHOD FOR EMBODYING PARALLEL OPERATION OF SEMICONDUCTOR ETCHING PROCESS SIMULATION

摘要

PURPOSE: A method for embodying parallel operation of semiconductor etching process simulation is provided to improve the accuracy of the calculation by simultaneously operating an ion behavior mechanism of a plasma region and a shape change mechanism of a substrate. CONSTITUTION: A movement(102) of an ion received from a plasma gas layer to a substrate is calculated using a numerical analysis method of a monte coral method(101). An incident angle of the ion and an incident energy of the ion are calculated by the calculated result(103). A shape change of the substrate by an incident particle is observed using a three dimensional surface advancement simulation(105). A surface advancement algorithm is performed using an algorithm(104) with a cell removing method and then the performed result is outputted to a graphic processor(106).