| 摘要 |
PROBLEM TO BE SOLVED: To enable to set the most suitable chemical conditions for the physical properties of a work, by a method wherein a variable related to chemicals is controlled on the basis of a formula so as to enable the amount of a metal oxide film to be dissolved to amount to a prescribed value when a semiconductor substrate is cleaned. SOLUTION: The pH of chemicals is the most important when chemical conditions are set. The allowable amount of a metal oxide film dissolved to cause no deterioration in the characteristics of the metal oxide film is previously determined, and the pH conditions are calculated by the use of a dissolution volume calculation formula. A method of determining the amount of chemicals to replenish is obtained through a manner where a formula which represents an excess or a shortage of chemicals by the use of one or more variables related to chemicals is obtained, and when a cleaning operation is carried out, the variables are controlled one the basis of the formula to enable the dissolution amount or degree of damage of a metal oxide film so as not to exceed a prescribed value. Data used for the above setting are stored in a data processor, and the setting is carried out. By this setup, the most suitable chemical conditions for a work are set, maintained, and controlled, so that a cleaning operation can be effectively carried out.
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