发明名称 METHOD FOR PRODUCING SILICON
摘要 A method of manufacturing silicon, comprising the steps of depositing the silicon by bringing silanes into contact with the surface of a base material while heating and holding the surface of the base material at the temperatur e less than the melting point of the silicon and raising the temperature of th e surface of the base material to melt a part or all of the deposited silicon so as to drop the silicon from the surface of the base material for collection.
申请公布号 CA2418703(C) 申请公布日期 2008.04.29
申请号 CA20022418703 申请日期 2002.06.06
申请人 TOKUYAMA CORPORATION 发明人 WAKAMATSU, SATORU;ODA, HIROYUKI
分类号 C01B33/035 主分类号 C01B33/035
代理机构 代理人
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