发明名称 |
METHOD FOR PRODUCING SILICON |
摘要 |
A method of manufacturing silicon, comprising the steps of depositing the silicon by bringing silanes into contact with the surface of a base material while heating and holding the surface of the base material at the temperatur e less than the melting point of the silicon and raising the temperature of th e surface of the base material to melt a part or all of the deposited silicon so as to drop the silicon from the surface of the base material for collection.
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申请公布号 |
CA2418703(C) |
申请公布日期 |
2008.04.29 |
申请号 |
CA20022418703 |
申请日期 |
2002.06.06 |
申请人 |
TOKUYAMA CORPORATION |
发明人 |
WAKAMATSU, SATORU;ODA, HIROYUKI |
分类号 |
C01B33/035 |
主分类号 |
C01B33/035 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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