发明名称 Method for manufacturing semiconductor light emitting device
摘要 A laminated structure having light-emitting units is formed on a single-crystal wafer. Electrode patterns are formed on the single-crystal wafer opposite the light-emitting units. Dummy patterns are formed on the single-crystal wafer at a location spaced apart from a location opposite the light-emitting units, and offset from a desired cleavage line intersecting the light-emitting units. A scratch is formed on the desired cleavage line. The wafer is cleaved, originating on the scratch, along the cleavage line orientation, in the direction from the dummy pattern, toward the light-emitting units.
申请公布号 US7547587(B2) 申请公布日期 2009.06.16
申请号 US20080052777 申请日期 2008.03.21
申请人 MITSUBISHI ELECTRIC CORPORATION 发明人 NAKAMURA HITOSHI;ABE HAJIME;ISHIO NORIAKI
分类号 H01L21/20 主分类号 H01L21/20
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