| 摘要 |
PURPOSE:To secure the high flatness on a semiconductor wafer by a method wherein, within the title polishing device of semiconductor wafer, abrasives are fed to the space between the wafer and a surface plate meeting the same requirements (feed amount, abrasive temperature) while specifying the temerature requirement for the whole wafer surface. CONSTITUTION:An abrasive feeding port 4A is formed on the central part of a polishing plate 4 whereon a semiconductor wafer is bonded. An abrasive feeding path 2A continuously connected to the feeding port 4A is formed on the central part of a polishing head 2 whereon the plate 4 is set. The abrasive (7b) is fed to the space between a polishing cloth 6 on a surface plate 1 and the wafer 4 through the intermediary of the feeding path 3A of a pressurizing cylinder 3, said feeding path 2A furthermore the feeding port 4A. Through these procedures, the abrasive can be fed from the first abrasive feeding path 8A on the central part of surface plate 1 and the feeding port 4A of the underneath polishing plate 4 to the surface plate 1 extending over the whole junction surface with the wafer 4 so that the temperature distribution during the polishing time may be equalized by the cooling down effect of the adhesive so as to specify the polishing rate. |
