METHOD OF GAAS THIN FILM GROWTH OF SILICON SUBSTRATE USING SIGE/GE BUFFER LAYER

摘要

The method includes the steps of growing a SixGe1-x thin film (1) on a silicon substrate (4), growing a Ge thin film (2) on the SixGe1-x thin film (1), and growing a GaAs thin film (3) on the Ge thin film (2), thereby forming the SixGe1-x and Ge thin films (1,2) between the Si substrate and the GaAs layer to reduce the lattice mismatch between Si and GaAs.