发明名称 |
Vertical optical cavities produced with selective area epitaxy |
摘要 |
A monolithic vertical optical cavity device built up along a vertical direction. The device has a bottom Distributed Bragg Reflector (DBR), a Quantum Well (QW) region consisting of least one active layer grown on top of the bottom DBR by using a Selective Area Epitaxy (SAE) mask such that the active layer or layers exhibit a variation in at least one physical parameter in a horizontal plane perpendicular to the vertical direction and a top DBR deposited on top of the QW region. A spacer is deposited with or without SAE adjacent the QW region. The device has a variable Fabry-Perot distance defined along the vertical direction between the bottom DBR and the top DBR and a variable physical parameter of the active layer. The varying physical parameter of the active layers is either their surface curvature and/or the band gap and both of these parameters are regulated by SAE. The monolithic vertical cavity device can be used as a Vertical Cavity Surface Emitting Laser (VCSEL) or a Vertical Cavity Detector (VCDET). |
申请公布号 |
AU2784799(A) |
申请公布日期 |
1999.10.18 |
申请号 |
AU19990027847 |
申请日期 |
1999.02.24 |
申请人 |
BANDWIDTH 9 |
发明人 |
GABRIEL S. LI;WUPEN YUEN;CONSTANCE J. CHANG-HASNAIN |
分类号 |
H01S5/183;H01S5/20;H01S5/40;H01S5/42 |
主分类号 |
H01S5/183 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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