| 摘要 |
PROBLEM TO BE SOLVED: To provide a process for forming a nitride based semiconductor capable of forming a nitride based semiconductor layer of good crystallinity with little dislocation and little crystal defect caused by detachment on the upper surface of a substrate with small number of growth steps. SOLUTION: The process for forming a nitride based semiconductor comprises a step for forming a mask layer 2 of SiN on the upper surface of a sapphire substrate 1 such that a part of the upper surface of the sapphire substrate 1 is exposed, a step for forming an AlGaN buffer layer 3 on the exposed upper surface of the sapphire substrate 1 and the upper surface of the mask layer 2, and a step for growing a GaN layer 4. COPYRIGHT: (C)2007,JPO&INPIT
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