| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film capacitor, which can reduce a leak current and increase a capacity. SOLUTION: An upper electrode 3 and lower electrode 1 are made of at least one material chosen from metal nitrides of TiN, Ti, W, WN, Pt, Ir, and Ru. A capacitance insulation film 2 is made of at least one material chosen from ZrO2, HfO2, (Zrx, Hf1-x)O2 (0<x<1), (Zry, Ti1-y)O2 (0<y<1), (Hfz, Ti1-z)O2 (0<z<1), or (Zrk, Til, Hfm)O2 (0<k, l, m<1 and k+l+m=1) formed by the Atomic Layer Deposition (hereinafter, ALD) method. COPYRIGHT: (C)2007,JPO&INPIT
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