SEMICONDUCTOR DEVICES INCLUDING CAPACITORS AND METHODS FOR MANUFACTURING THE SAME

摘要

A method for manufacturing a semiconductor device includes forming a capacitor which includes a lower electrode, a dielectric layer, and an upper electrode which are sequentially stacked on a substrate. Forming the upper electrode includes forming a first metal nitride layer on the dielectric layer, and forming a second metal nitride layer on the first metal nitride layer. The first metal nitride layer is interposed between the dielectric layer and the second metal nitride layer. The first metal nitride layer is formed at a temperature which is lower than the temperature of the second metal nitride layer. So, the leakage current of the semiconductor device can be reduced.