PERPENDICULAR SPIN TRANSFER TORQUE MEMORY (STTM) DEVICE WITH COUPLED FREE MAGNETIC LAYERS

摘要

Perpendicular spin transfer torque memory (STTM) devices with enhanced stability and damping are described. For example, a material layer stack for a magnetic tunneling junction includes a fixed magnetic layer. A dielectric layer is disposed above the fixed magnetic layer. A first free magnetic layer is disposed above the dielectric layer. A second free magnetic layer is magnetically coupled with the first free magnetic layer.