| 摘要 |
PURPOSE:To eliminate the disconnection of a metallic wiring by a method wherein the first-third insulators are formed on the surface of a semiconductor substrate having stepwise differences by a vapor growing or a coating method, and a heat treat is performed, accordingly the stewise difference is smoothened. CONSTITUTION:A field oxide film 2, a gate oxide film 3 and a polycrystalline Si layer 4 are formed on an Si substrate 1. Next, the pattern of the polycrystalline Si layer which becomes a gate electrode 5 and a wiring 6 is formed by a photoetching, and an impurity is doped resulting in the formation of diffused layers 9 and 10 of a source and a drain regions. Then, the first PSG film 11 is formed by a vapor growing method, and the step part of the polycrystalline Si layer is some smoothened by performing a heat treatment. The second PSG film 12 is formed by a coating method, and succeedingly the third PSG film 13 is formed by a vapor growing method. A heat treatment is performed, and thus the step part of the polycrystal is further smoothened. |
