| 摘要 |
PURPOSE:To obtain a solid-state image pickup device having excellent quality by constituting a smoothing layer by a heat-resistant organic insulating layer, a second electrode and an inorganic insulating layer, which does not form a compound with a photoconductive film in order from the first electrode side. CONSTITUTION:Polyimide as a heat-resistant organic insulating material is applied onto an insulating film 34 containing first electrodes 40, 42, 44, and polyimide is solidified and degassed through baking. When a substance such as aluminum oxide is used as a material for an inorganic insulating layer 66, adhesion with polyimide is sufficient, and enough smoothness is acquired after the formation of the layer 66. Contact-holes 68, 70 are shaped at the predetermined positions of a heat-resistant organic insulating layer 64 and the inorganic insulating layer 66, and second electrodes 72, 74, 76 connected to the first electrodes are formed. The second electrodes and the inorganic insulating layer 66 are not reacted, and excellent insulating properties are kept while the exudation of the heat-resistant organic insulating layer 64 is also blocked completely by the inorganic insulating layer 66. Amorphous-silicon is laminated as a photoconductive film 78, thus obtaining a high-resistivity film sufficient for the operation of image pickup. |
