发明名称 MASK SURROGATE SEMICONDUCTOR PROCESS
摘要 A mask-defect-immune process for making semiconductor devices. The process features the creation of one or more surrogate masks in semiconductor wafer material per se, thus to eliminate the requirement that plural masks be used, and that plural mask alignments be performed. In all ways of practicing the invention, one surrogate mask in created in a dopant-opaque region.
申请公布号 CA1277437(C) 申请公布日期 1990.12.04
申请号 CA19890597651 申请日期 1989.04.24
申请人 ADVANCED POWER TECHNOLOGY, INC. 发明人 HOLLINGER, THEODORE G.
分类号 H01L21/68;H01L21/033;H01L21/266;H01L21/302;H01L21/3065;H01L21/336;H01L29/78 主分类号 H01L21/68
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