发明名称 INTRA-CAVITY TRIPLED SOLID STATE DIODE PUMPED LASER
摘要 A diode pumped laser (20) wherein third harmonic generation at 355 nm is obtained from an intra-cavity tripled diode pumped Nd:YVO4 crystal (S) utilizing an angle-tuned LBO doubler (D) and tripler (T), and operated at high repetition rates and good overall efficiency. An average UV power of over 2 watts at 30 kHz and 1 watt at 100 kHz is typically obtained with a 20 watt diode array "bar" (DP) side-pumping a one percent (1 %) Nd:YVO4 (vanadate) slab (S). The device utilizes room temperature intra-cavity doubling and takes advantage of a small beam waist at the doubler and tripler required with low-power CW diode pumping.
申请公布号 WO9745902(A1) 申请公布日期 1997.12.04
申请号 WO1997US09530 申请日期 1997.06.02
申请人 LICONIX;ALFREY, ANTHONY, J.;SINOFSKY, ED 发明人 ALFREY, ANTHONY, J.;SINOFSKY, ED
分类号 H01S3/094;G02F1/35;H01S3/042;H01S3/06;H01S3/08;H01S3/0941;H01S3/109;H01S3/117;H01S3/139;(IPC1-7):H01S3/10 主分类号 H01S3/094
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