| 摘要 |
PURPOSE: A method of making a pixel electrode is provided to be capable of forming a complex pixel electrode using two-step tone exposure without adding a separated mask. CONSTITUTION: The method of making a pixel electrode comprises stacking an insulating film(22) on electrodes of a thin film transistor, forming a contact hole by use of photolithography and etching processes, forming a transparent electrode layer(26) and a reflection film layer(27) on the insulating film, forming a photoresist pattern(28) by use of two-step tone exposure, wherein the photoresist becomes thick at a reflection region and becomes thin at a penetration region, and etching the transparent electrode layer(27) and the reflection film layer(28) by use of the photoresist pattern as an etch mask.
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