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发明名称
具有场氧化膜的半导体装置之制造方法
摘要
于一矽基板之主表面上,在一包括一氧化矽膜、一氮化矽膜及一氧化矽膜之叠层的侧壁上形成一由氮化矽制成之侧间隔物。其后,使用该叠层、侧间隔物及抗蚀剂层作为遮罩,藉由植入杂质离子而形成一通道截断离子掺杂区。在移除该抗蚀剂层及侧间隔物后,藉由使用该叠层作为遮罩之选择性氧化来形成一场氧化膜,且形成一对应于该离子掺杂区之通道截断区。在移除该叠层后,于该场氧化膜之每一装置开口中形成诸如MOS型电晶体之电路装置。
申请公布号
TW200631128
申请公布日期
2006.09.01
申请号
TW095103133
申请日期
2006.01.26
申请人
山叶股份有限公司
发明人
高见秀诚;深见博昭
分类号
H01L21/76;H01L21/316;H01L21/265;H01L27/08
主分类号
H01L21/76
代理机构
代理人
陈长文
主权项
地址
日本
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