发明名称 |
Method for increasing deposition rates of metal layers from metal-carbonyl precursors |
摘要 |
A method for increasing deposition rates of metal layers from metal-carbonyl precursors by mixing a vapor of the metal-carbonyl precursor with CO gas. The method includes providing a substrate in a process chamber of a deposition system, forming a process gas containing a metal-carbonyl precursor vapor and a CO gas, and exposing the substrate to the process gas to deposit a metal layer on the substrate by a thermal chemical vapor deposition process.
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申请公布号 |
US7270848(B2) |
申请公布日期 |
2007.09.18 |
申请号 |
US20040996145 |
申请日期 |
2004.11.23 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORP. |
发明人 |
SUZUKI KENJI;GUIDOTTI EMMANUEL P.;LEUSINK GERRIT J.;MCFEELY FENTON R.;MALHOTRA SANDRA G. |
分类号 |
C23C16/06 |
主分类号 |
C23C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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