发明名称 |
Semiconductor device test patterns and related methods for precisely measuring leakage currents in semiconductor cell transistors |
摘要 |
Semiconductor device test patterns are provided that include a word line on a semiconductor substrate and an active region having a first impurity doped region and a second impurity doped region in at the semiconductor substrate. A first self-aligned contact pad is electrically connected to the first impurity doped region, and a first direct contact is electrically connected to the first self-aligned contact pad. A first bit line is electrically connected to the first direct contact, and a first probing pad is electrically connected to the first bit line. The test pattern further includes a second self-aligned contact pad that is electrically connected to the second impurity doped region, and a second direct contact electrically connected to the second self-aligned contact pad. A second conductive line is electrically connected to the second direct contact, and a second probing pad is electrically connected to the second conductive line. These test patterns may be used to measure leakage current in a cell transistor of the semiconductor device.
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申请公布号 |
US7271408(B2) |
申请公布日期 |
2007.09.18 |
申请号 |
US20040796672 |
申请日期 |
2004.03.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM YOUNG-PIL;JIN BEOM-JUN |
分类号 |
H01L21/66;H01L23/58;H01L21/8242;H01L27/108 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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