发明名称 |
SAMPLE PLACING ELECTRODE AND PLASMA PROCESSING APPARATUS EMPLOYING SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a temperature-controlled sample placing electrode employing a heater that is capable of increasing the ability to control electrode temperature, and maintaining overall uniformity in electrostatic absorption power. SOLUTION: The sample placing electrode 0113 provided in a processing chamber with a substrate 0112 to be processed disposed thereon, comprises a dielectric 0122 having a sample placing surface; an electrode thin film 0123 that is provided to face the sample placing surface across the dielectric 0122, and comprises a layer of substantially the same height that doubles as an electrostatic absorption electrode and a heater electrode; and a power source device capable of simultaneously supplying the electrode thin film 0123 with alternating-current power 0118 for the heater and direct-current power 0117 for electrostatic absorption. COPYRIGHT: (C)2007,JPO&INPIT |
申请公布号 |
JP2007242913(A) |
申请公布日期 |
2007.09.20 |
申请号 |
JP20060063783 |
申请日期 |
2006.03.09 |
申请人 |
HITACHI HIGH-TECHNOLOGIES CORP |
发明人 |
YOSHIOKA TAKESHI;OMOTO YUTAKA;TSUBONE TSUNEHIKO |
分类号 |
H01L21/683;H01L21/3065;H02N13/00 |
主分类号 |
H01L21/683 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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