PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

摘要

A plasma processing apparatus is provided to approximate a desired wafer temperature distribution by arbitrarily controlling the in-plane distribution of thermal conductivity of heating gas and by highly precisely adjusting the in-plane distribution of thermal conductivity of a contact surface of a wafer and an electrode surface. A plurality of units for independently supplying or exhausting heating gas between a material to be processed and the surface of an electrode for an electrostatic absorption(111) are installed. While the in-plane distribution of heating gas pressure is controlled, the electrode for the electrostatic absorption is buried in the surface of the electrode to form a plurality of independent regions so that a DC voltage is applied to each region and the temperature distribution of the material to be processed is controlled. In sequentially performing respective processes of a plasma treatment on the material to be processed according to a predetermined order, the in-plane distribution of the heating gas pressure and the DC voltage can be arbitrarily varied in each process so that the temperature distribution of the material to be processed is controlled in each process.