LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME

摘要

A light emitting diode and a manufacturing method thereof are provided to protect the light emitting diode by preventing the electron supplied from the p-electrode from moving to the active layer. An n-type semiconductor layer(120), an active layer(130) and a p-type semiconductor layer(140) are laminated successively on a substrate(110). A P electrode(150) is formed on the p-type semiconductor layer. An N electrode(160) is formed on the n-type semiconductor layer in which the fixed region of the n-type semiconductor layer is exposed by an etching. The active layer is formed with the quantum well structure comprised of a well layer(131) in which the energy band gap is small and a barrier layer(132) in which the energy band gap is greater than the well layer by turns. The active layer is formed with the laminated multiple quantum well over at least twice of well layer and barrier layer.