| 摘要 |
This invention generally relates to a hybrid device, a combined JFET and HEMT device structure, and a method of fabricating a combined JFET and HEMT device structure, and more particularly to a hybrid device having a drain terminal, a source terminal and a gate terminal, wherein the hybrid device comprises: a HEMT; and a JFET coupled in series with the HEMT, wherein each of the HEMT and the JFET comprises a gate region, a source conduction region and a drain conduction region, and wherein the gate region of the JFET is coupled to a first one of said conduction regions of the HEMT. |
