METHOD AND ARRANGEMENT FOR CHEMOMECHANICAL POLISHING

摘要

PROBLEM TO BE SOLVED: To provide a method and arrangement for chemomechanical polishing for a reduced dishing.

SOLUTION: In a CMP process, a copper and barrier metal formed on a substrate 13 are polished to form an embedded copper wiring. Here, a polishing cloth 12 is dressed with a dressing pressure being 29 g/cm2, to make surface roughness of the polishing cloth 3μ to 5μm. Thus, dishing of a copper wiring is reduced than before without degrading polishing speed with a copper or barrier metal.

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