| 摘要 |
PURPOSE: To provide an XY address type solid-state image pickup device manufactured by the CMOS process that has a wide aperture rate in spite of its small element size and can reduce the kTC noise (thermal noise). CONSTITUTION: In the solid-state image pickup device, a photodiode 10, a reset transistor(TR) 12, a source follower amplifier 14, and a horizontal selection TR 16 are formed in each pixel area Pmn. A kTC noise reduction circuit 6VR1 to reduce the kTC noise and a CDS(Correlated Double Sampling) circuit 6CL1 are formed at the outside of each pixel area Pmn. A 1st differential TR 62 of the kTC noise reduction circuit 6VR1 and the source follower amplifier 14 in each pixel area Pmn configure a differential amplifier.
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