THIN FILM SEMICONDUCTOR DEVICE AS WELL AS METHOD AND APPARATUS FOR MANUFACTURING POLYCRYSTAL SEMICONDUCTOR THIN FILM

摘要

PURPOSE: To enhance a quality of a polycrystal semiconductor film formed on an insulating board. CONSTITUTION: A thin film semiconductor device comprises a gate electrode provided on a first semiconductor layer made of a polycrystal silicon film on the insulating board through a gate insulating film, a channel region provided on the semiconductor layer, a source region and a drain region disposed at both sides of the channel region in a MIS field effect transistor so that at least a main orientation of the channel region is a thin film in plane {110} with respect to the surface of the gate insulating film. Further, it is preferred that a polycrystal semiconductor film having a main orientation in plane {100} of a surface substantially perpendicular to a direction for coupling the source to the drain region is applied to the channel of the semiconductor device. The semiconductor device also comprises a polycrystal semiconductor film of a high quality in which a grain boundary, a grain size, a crystal orientation can be controlled and a roughness of a film and a crystal defect generated in a process of crystallization are reduced, on the insulating board.