| 摘要 |
PURPOSE:To attain electrostatic bonding of a diaphragm type silicon pressure sensor and a glass pedestal at the prescribed arrangement by a method wherein the openings of the thin film parts of a silicon wafer and the penetrating holes of the glass pedestal are enabled to be positioned easily placing the silicon wafer to the upside as it is. CONSTITUTION:Penetrating holes 24 of a large number are opened according to mechanical processing or chemical etching at the equal pitch with the thin film parts of a silicon wafer 21 on a glass pedestal 23. Heat-resistant and insulative pins 25 are inserted into penetrating holes 2 of two places at both the edges of the peripheral part of the glass pedestal 23, and by putting the thin film parts of the silicon wafer 21 on the protruding parts of the pins, the penetrating holes 24 of the glass pedestal 23 and the openings of the thin film parts of the silicon wafer 21 can be positioned easily. The protruding parts of the pins 25 are made a little shorter than the recesses of the thin film parts of the silicon wafer 21 to remove generation of impacts with the silicon wafer 21. After electrostatic bonding is completed, the pins 25 are pulled out, and the wafer is cut into chips to be assembled. |
