METHOD OF ALUMINIUM AND SILICON OXIDES COMBINED THIN LAYERS PRODUCTION IN INTERFERENCE SYSTEMS OF LAYERS FOR 2,7 TILL 3,5 MICROMETER WAVELENGTH RANGE

摘要

The solution concerns the field of optical interference layers and handles the problem of preparation of non-absorbing and mechanically resistant interference layers for the band of wave lengths between 2.7 and 3.5 micrometers by the method of vacuum vaporisation. The principle of the solution lies in forming thin aluminium layers (Al2O3) prepared by vacuum reactive vaporisation under the oxygen pressure between 1 x 10 <-2> to 2 x 10 <-2> Pa with the speed of layer growth between 0.5 and 1.5 nm/s per the base at the temperature between 200 and 300 degrees C in combination with silicon layers (Si) vaporised in high vacuum at the pressure under 2 x 10 <-3> with the speed of layer growth between 2 and 5 nm/s at the temperature between 200 and 300 degrees C. These systems of layers indicate low values of optical absorption in comparison with layers of commonly used titanic and silicon oxides (Ti02, Si02) in the introduced field of wave lengths and also good mechanical and chemical resistance.