发明名称 |
Method of forming iridium oxide local interconnect |
摘要 |
An iridium oxide local interconnect method for a ferroelectric memory cell includes the steps of forming a conductive layer that extends from a source/drain contact of the transistor proximate to an electrode contact of the ferroelectric capacitor and forming an iridium oxide local interconnect extending from the source/drain contact of the transistor to the electrode contact of the ferroelectric capacitor. The conductive layer is laterally terminated not less than one-half micron from the electrode contact of the ferroelectric capacitor. The conductive layer can include an upper iridium layer and a bottom titanium nitride layer, or can include a single layer of completely reacted titanium nitride. After the local interconnect is formed a top oxide layer is deposited. A late recovery anneal is then performed in oxygen at an elevated temperature to rejuvenate the electrical characteristics of the ferroelectric capacitor. Finally, a bit line contact is opened and metalized.
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申请公布号 |
US5985713(A) |
申请公布日期 |
1999.11.16 |
申请号 |
US19980183545 |
申请日期 |
1998.10.29 |
申请人 |
RAMTRON INTERNATIONAL CORPORATION |
发明人 |
BAILEY, RICHARD A. |
分类号 |
H01L21/02;H01L21/768;H01L27/115;(IPC1-7):H01L29/76;G11C11/22;G11C11/24 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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