| 摘要 |
PROBLEM TO BE SOLVED: To provide a crystal growth apparatus for producing a group III nitride crystal by suppressing a change in the mixing ratio of an alkali metal and a group III metal. SOLUTION: A crucible 10 holds a mixed melt 270 of metal Na and metal Ga. A reaction vessel 20 has a melt reservoir part 23 and surrounds the crucible 10. The melt reservoir part 23 holds an alkali metal melt 280. A gas supply pipe 90 supplies nitrogen gas from a gas cylinder 130 to the reaction vessel 20 via an alkali metal melt 290. A support apparatus 40 brings a seed crystal 5 into contact with the mixed melt 270. During the growth of a GaN crystal from the seed crystal 5, heating devices 50 and 60 heat the crucible 10 to a crystal growth temperature, a heater/cooler 70 heats the melt reservoir part 23 to a temperature at which the vapor pressure of the metal Na evaporating from the metal melt 280 is substantially equal to the vapor pressure of the metal Na evaporating from the mixed melt 270, and a heater/cooler 80 heats the alkali metal melt 290 to a condensation temperature. COPYRIGHT: (C)2008,JPO&INPIT
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