Organic light emitting display device and method of fabricating the same

摘要

Disclosed herein are an organic light emitting display device includes first to third sub-pixels realizing different colors, wherein each of the first to third sub-pixels includes first and second electrodes disposed on a substrate so as to face each other, an emission layer formed between the first and second electrodes, a multi-layered hole transporting layer formed between the first electrode and the emission layer to be in contact with the first electrode and the emission layer, and an electron transporting layer formed between the second electrode and the emission layer, wherein multi-layered hole transporting layer of at least one of the first to third sub-pixels includes an at least two-layered first hole transporting layer formed of a hole host and a p-type dopant having a doping concentration of 1 to 10% and a second hole transporting layer formed of the hole host.

主权项

1. An organic light emitting display device comprising a first sub-pixel, a second sub-pixel, and a third sub-pixel for emitting different colored light, each of the sub-pixels comprising:
an anode and a cathode on a substrate configured to face each other; an emission layer between the anode and the cathode; a multi-layered hole transporting layer between, and in contact with, the anode and the emission layer; and an electron transporting layer between the cathode and the emission layer, wherein the multi-layered hole transporting layer of at least one of the first sub-pixel, the second sub-pixel and the third sub-pixel comprises:
a first hole transporting layer, wherein the first hole transporting layer is of at least two materials, the at least two materials including a hole host and a p-type dopant having a doping concentration of 1 vol. % to 10 vol. %; anda second hole transporting layer formed of the hole host, wherein the second hole transporting layer is over the first hole transporting layer and is farther from the anode than the first hole transporting layer is from the anode, and has a doping concentration less than the doping concentration of the first hole transporting layer, andwherein the first hole transporting layer comprising the p-type dopant occupies 10 vol. % to 25 vol. % in the multi-layered hole transporting layer.